RU80N15S n-channel advanced power mosfet symbol rating unit v dss 150 v gss 25 t j 175 c t stg -55 to 175 c i s t c =25c 80 a i dp t c =25c 300 a t c =25c 80 t c =100c 60 t c =25c 176 t c =100c 88 r jc 0.85 c/w r ja 62.5 c/w e as 169 mj ruichips semiconductor co., ltd rev. a? apr., 2013 1 www.ruichips.com maximum junction temperature storage temperature range thermal resistance-junction to case drain-source avalanche ratings avalanche energy, single pulsed diode continuous forward current 300s pulse drain current tested continuous drain current(v gs =10v) maximum power dissipation mounted on large heat sink i d a p d w thermal resistance-junction to ambient parameter common ratings (t c =25c unless otherwise noted) ? 150v/80a, r ds (on) =31m(typ.)@v gs =10v ? avalanche rated ? reliable and rugged ? lead free and green devices available ? automotive applications and a wide variety of other applications ? high efficiency synchronous in smps ? high speed power switching drain-source voltage v gate-source voltage pin description features applications absolute maximum ratings to263 n-channel mosfet g s d d s g
RU80N15S min. typ. max. bv dss drain-source breakdown voltage 150 v 1 t j =125c 30 v gs(th) gate threshold voltage 2 3 4 v i gss gate leakage current 100 na r ds(on) drain-source on-state resistance 31 36 m v sd diode forward voltage 1.2 v t rr reverse recovery time 68 ns q rr reverse recovery charge 130 nc r g gate resistance 1 c iss input capacitance 3800 c oss output capacitance 550 c rss reverse transfer capacitance 250 t d(on) turn-on delay time 18 t r turn-on rise time 32 t d(off) turn-off delay time 80 t f turn-off fall time 56 q g total gate charge 90 q gs gate-source charge 25 q gd gate-drain charge 30 notes: ruichips semiconductor co., ltd rev. a? apr., 2013 2 www.ruichips.com v ds =v gs , i ds =250a static characteristics symbol parameter test condition RU80N15S unit v gs =0v, i ds =250a i dss zero gate voltage drain current v ds =150v, v gs =0v a electrical characteristics (t c =25c unless otherwise noted) v dd =35v, r l =35, i ds =1a, v gen =10v, r g =10 v ds =30v, v gs =10v, i ds =40a pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. the package limitation current is 75a. limited by t jmax , i as =26a, v dd = 48v, r g = 50 , starting t j = 25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing. gate charge characteristics nc ns i sd =40a, v gs =0v i sd =40a, dl sd /dt=100a/s v gs =0v,v ds =0v,f=1mhz v gs =0v, v ds =30v, frequency=1.0mhz pf dynamic characteristics v gs =20v, v ds =0v v gs =10v, i ds =40a diode characteristics
RU80N15S device marking package packaging quantity reel size tape width RU80N15S RU80N15S to263 tube 50 - - ruichips semiconductor co., ltd rev. a? apr., 2013 3 www.ruichips.com ordering and marking information
RU80N15S ruichips semiconductor co., ltd rev. a? apr., 2013 4 www.ruichips.com typical characteristics 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 175 i d - drain current (a) t j - junction temperature ( c) drain current vgs=10v 0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 9 10 r ds(on) - on - resistance (m ) v gs - gate - source voltage (v) drain current ids=40a 0 20 40 60 80 100 120 140 160 180 200 0 25 50 75 100 125 150 175 p d - power (w) t j - junction temperature ( c) power dissipation 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain - source voltage (v) safe operation area 10 s 100 s 1ms 10ms dc r ds(on) limited t c =25 c 0.001 0.01 0.1 1 1e -05 0.0001 0.001 0.01 0.1 1 zthjc - thermal response ( c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc = 0.85 c/w
RU80N15S ruichips semiconductor co., ltd rev. a? apr., 2013 5 www.ruichips.com typical characteristics 0 10 20 30 40 50 60 70 0 1 2 3 4 5 i d - drain current (a) v ds - drain - source voltage (v) output characteristics 3v 5v 6v 8v 10v 0 20 40 60 80 100 0 20 40 60 80 100 r ds(on) - on resistance (m) i d - drain current (a) drain - source on resistance 10v 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 normalized on resistance t j - junction temperature ( c) drain - source on resistance v gs =10v i d =40a t j =25 c rds(on)=31m 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - drain voltage (v) source - drain diode forward t j =25 c t j =175 c 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 1 10 100 1000 c - capacitance (pf) v ds - drain - source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 v gs - gate - source voltage (v) q g - gate charge (nc) gate charge vds=30v ids=40a
RU80N15S ruichips semiconductor co., ltd rev. a? apr., 2013 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU80N15S ruichips semiconductor co., ltd rev. a? apr., 2013 7 www.ruichips.com package information to263 2 c1 dep a2 c l l4 a1 1 a 2 1 h e l3 d l2 b1 b l1 e min nom max min nom max min nom max min nom max a 4.40 4.55 4.70 0.173 0.179 0.185 l 2.00 2.30 2.60 0.079 0.091 0.102 a1 0.00 0.10 0.25 0.000 0.005 0.010 l3 1.17 1.29 1.40 0.046 0.051 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 * * 1.70 * * 0.067 b 0.77 * 0.90 0.030 0.035 l4 b1 1.23 * 1.36 0.048 0.054 l2 c 0.34 * 0.47 0.013 0.019 0 * 8 0 * 8 c1 1.22 * 1.32 0.048 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.339 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.13 10.26 0.394 0.399 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.610 2.54bsc 0.100bsc 0.25 bsc 0.01 bsc 2.50 ref 0.098 ref inch symbol mm inch symbol mm
RU80N15S ruichips semiconductor co., ltd rev. a? apr., 2013 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86 - 755) 8311 - 5334 fax: (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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